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/*
* $Id: mtd-abi.h,v 1.11 2005/05/19 16:08:58 gleixner Exp $
*
* Portions of MTD ABI definition which are shared by kernel and user space
*/
#ifndef __MTD_ABI_H__
#define __MTD_ABI_H__
#ifndef __KERNEL__ /* Urgh. The whole point of splitting this out into
separate files was to avoid #ifdef __KERNEL__ */
#define __user
#endif
struct erase_info_user {
uint32_t start;
uint32_t length;
};
struct mtd_oob_buf {
uint32_t start;
uint32_t length;
unsigned char __user *ptr;
};
#define MTD_ABSENT 0
#define MTD_RAM 1
#define MTD_ROM 2
#define MTD_NORFLASH 3
#define MTD_NANDFLASH 4
#define MTD_PEROM 5
#define MTD_DATAFLASH 6
#define MTD_OTHER 14
#define MTD_UNKNOWN 15
#define MTD_CLEAR_BITS 1 // Bits can be cleared (flash)
#define MTD_SET_BITS 2 // Bits can be set
#define MTD_ERASEABLE 4 // Has an erase function
#define MTD_WRITEB_WRITEABLE 8 // Direct IO is possible
#define MTD_VOLATILE 16 // Set for RAMs
#define MTD_XIP 32 // eXecute-In-Place possible
#define MTD_OOB 64 // Out-of-band data (NAND flash)
#define MTD_ECC 128 // Device capable of automatic ECC
#define MTD_NO_VIRTBLOCKS 256 // Virtual blocks not allowed
// Some common devices / combinations of capabilities
#define MTD_CAP_ROM 0
#define MTD_CAP_RAM (MTD_CLEAR_BITS|MTD_SET_BITS|MTD_WRITEB_WRITEABLE)
#define MTD_CAP_NORFLASH (MTD_CLEAR_BITS|MTD_ERASEABLE)
#define MTD_CAP_NANDFLASH (MTD_CLEAR_BITS|MTD_ERASEABLE|MTD_OOB)
#define MTD_WRITEABLE (MTD_CLEAR_BITS|MTD_SET_BITS)
// Types of automatic ECC/Checksum available
#define MTD_ECC_NONE 0 // No automatic ECC available
#define MTD_ECC_RS_DiskOnChip 1 // Automatic ECC on DiskOnChip
#define MTD_ECC_SW 2 // SW ECC for Toshiba & Samsung devices
/* ECC byte placement */
#define MTD_NANDECC_OFF 0 // Switch off ECC (Not recommended)
#define MTD_NANDECC_PLACE 1 // Use the given placement in the structure (YAFFS1 legacy mode)
#define MTD_NANDECC_AUTOPLACE 2 // Use the default placement scheme
#define MTD_NANDECC_PLACEONLY 3 // Use the given placement in the structure (Do not store ecc result on read)
#define MTD_NANDECC_AUTOPL_USR 4 // Use the given autoplacement scheme rather than using the default
/* OTP mode selection */
#define MTD_OTP_OFF 0
#define MTD_OTP_FACTORY 1
#define MTD_OTP_USER 2
struct mtd_info_user {
uint8_t type;
uint32_t flags;
uint32_t size; // Total size of the MTD
uint32_t erasesize;
uint32_t oobblock; // Size of OOB blocks (e.g. 512)
uint32_t oobsize; // Amount of OOB data per block (e.g. 16)
uint32_t ecctype;
uint32_t eccsize;
};
struct region_info_user {
uint32_t offset; /* At which this region starts,
* from the beginning of the MTD */
uint32_t erasesize; /* For this region */
uint32_t numblocks; /* Number of blocks in this region */
uint32_t regionindex;
};
struct otp_info {
uint32_t start;
uint32_t length;
uint32_t locked;
};
#define MEMGETINFO _IOR('M', 1, struct mtd_info_user)
#define MEMERASE _IOW('M', 2, struct erase_info_user)
#define MEMWRITEOOB _IOWR('M', 3, struct mtd_oob_buf)
#define MEMREADOOB _IOWR('M', 4, struct mtd_oob_buf)
#define MEMLOCK _IOW('M', 5, struct erase_info_user)
#define MEMUNLOCK _IOW('M', 6, struct erase_info_user)
#define MEMGETREGIONCOUNT _IOR('M', 7, int)
#define MEMGETREGIONINFO _IOWR('M', 8, struct region_info_user)
#define MEMSETOOBSEL _IOW('M', 9, struct nand_oobinfo)
#define MEMGETOOBSEL _IOR('M', 10, struct nand_oobinfo)
#define MEMGETBADBLOCK _IOW('M', 11, loff_t)
#define MEMSETBADBLOCK _IOW('M', 12, loff_t)
#define OTPSELECT _IOR('M', 13, int)
#define OTPGETREGIONCOUNT _IOW('M', 14, int)
#define OTPGETREGIONINFO _IOW('M', 15, struct otp_info)
#define OTPLOCK _IOR('M', 16, struct otp_info)
struct nand_oobinfo {
uint32_t useecc;
uint32_t eccbytes;
uint32_t oobfree[8][2];
uint32_t eccpos[32];
};
#endif /* __MTD_ABI_H__ */
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